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APT10035B2FLL APT10035LFLL
1000V 28A 0.350
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT10035 UNIT Volts Amps
1000 28 112 30 40 690 5.5 -55 to 150 300 28 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 28 0.350 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 14A)
Ohms A nA Volts
3-2003 050-7037 Rev B
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT10035B2FLL - LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 28A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 28A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 28A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 670V VGS = 15V ID = 28A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5185 881 160 186 24 122 12 10 36 9 900 623 1423 779
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
28 112 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -28A)
5
dv/
t rr
Reverse Recovery Time (IS = -28A, di/dt = 100A/s) Reverse Recovery Charge (IS = -28A, di/dt = 100A/s) Peak Recovery Current (IS = -28A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
320 650 3.60 9.72 16.5 24.7
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 7.65mH, RG = 25, Peak IL = 28A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID28A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9 0.15 0.7
0.10
0.5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
3-2003
0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE
050-7037 Rev B
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
60
RC MODEL
APT10035B2FLL - LFLL
VGS =15,10 & 8V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0271 0.00899F
50 7V 40 6.5V
Power (Watts)
0.0656
0.0202F
30 6V 20 5.5V 5V
0.0859 Case temperature
0.293F
10 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 14A
GS
70 60 50 40 30 20 10 0
1.30 1.20 VGS=10V
1.10
TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
1.00
VGS=20V
0.90 0.80
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
30
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
25
1.10
20 15
1.05
1.00
10
0.95 0.90 0.85 -50
5 0 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 14A = 10V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1
1.0 0.9 0.8
3-2003 050-7037 Rev B
1.5
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT10035B2FLL - LFLL
112
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 Ciss
C, CAPACITANCE (pF)
50
100S 10
1,000
Coss
TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS
10mS
= 28A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 100
12
VDS=200V VDS=500V
TJ =+150C TJ =+25C 10
8
VDS=800V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 180 160 140
td(on) and td(off) (ns)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80
V
DD G
= 670V
td(off) 60
V
DD G
R
= 5
T = 125C
J
L = 100H
tf
120 100 80 60 40 20 0 0
= 670V
R
= 5
T = 125C
J
tr and tf (ns)
L = 100H
40 tr 20
td(on) 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
0
10
20
2500
= 670V R = 5
Eon
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
T = 125C
J
4000
L = 100H E ON includes diode reverse recovery.
Eoff
1500
3000 Eon 2000
1000
V I
DD
= 670V
3-2003
D J
= 28A
500 Eoff 0 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20
1000
T = 125C L = 100H E ON includes diode reverse recovery.
050-7037 Rev B
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT10035B2FLL - LFLL
Gate Voltage
10 % td(on) tr
Drain Current
90%
T = 125 C J
t
d(off)
Gate Voltage
T = 125 C J
90% 5% 10 % 5%
Drain Voltage
Drain Voltage
90% 10% tf 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7037 Rev B
3-2003
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain

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